Studies of III-Nitride Quantum Wells And Optoelectronic Devices

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• Prof. Rong Zhang (Nanjing University, China)
• Friday 27 January 2012, 16:00-17:00
• Centre for Advanced Photonics and Electronics, 9, JJ Thomson Ave..

If you have a question about this talk, please contact acf26.

Polarization and strain are key factors to influence energy bands of III -nitrides and their quantum wells, due to very large spontaneous and piezoelectric polarization in these materials. Based on these effects, people could also tailor the band structures and design novel devices with new features. In this talk I will present theoretical calculations of band modification based on controlling polarization and strain in the III -nitride films and quantum structures. Polar and non-polar III -nitride materials and optoelectronic devices, especially LEDs and UV detectors, are fabricated and investigated via theoretical and experimental studies.

This talk is part of the CAPE-CIKC Advanced Technology Lectures series.

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