CMOS compatible micro-hotplate for high temperature gas sensors based on SOI and Deep RIE technology

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• Prasanta Kumar Guha, High Voltage Microelectronics Lab, CAPE Building, Department of Engineering
• Wednesday 25 October 2006, 11:00-12:30
• CAPE building, seminar room 21-23. 9 JJ Thomson Ave. CB3 0FA.

If you have a question about this talk, please contact Dr. Richard, Yong Qing Fu.

This talk describes the design and characterisation of a new generation of fully CMOS compatible novel micro-heater for high temperature gas sensors. The micro-heaters employ advanced MOSFET heaters embedded in an SOI membrane. The micro-heaters are required to heat up the sensing material, so that it can reacts with the gas molecules effectively. The heaters can operate at a ground-breaking high temperature of 550°C for an ultra-low power consumption of 16 mW (continuous operation) and have a thermal rise time of below 10 ms. The yield of the micro-hotplates after deep RIE back-etching was close to 90% while the residual stress was found to be minimal, resulting in flat and stable membranes. Electronic circuits for drive and readout have also been designed and integrated with the micro-hotplates to create a smart gas sensor.

This talk is part of the MEMS seminar series.

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