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University of Cambridge > Talks.cam > Physics and Chemistry of Solids Group > Molecular adsorption and strained graphene on boron nitride
Molecular adsorption and strained graphene on boron nitrideAdd to your list(s) Download to your calendar using vCal
If you have a question about this talk, please contact Stephen Walley. We have used high resolution ambient AFM to investigate the properties of graphene grown on hBN flakes on sapphire using molecular beam epitaxy (MBE) and find that giant moiré patterns form indicating that the graphene is highly strained. We also observe highly facetted cracks in the graphene leading to local regions of strain relief and highly anisotropic distortion of the graphene. It is also possible to use the AFM to generate cracks in the graphene which propagate over long distances. MBE has also been used to grow hBN on graphite which shows excellent electrical properties and the prospects for the growth of heterostructures formed from strain-engineered graphene and hBN are discussed. This talk is part of the Physics and Chemistry of Solids Group series. This talk is included in these lists:
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