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experimental and theoretical results on silicon Isolated Double Quantum Dots (IDQDs) with nearby Single Electron Transistors (SETs)

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I will present a brief introduction to the Hitachi Cambridge Laboratory, and then both experimental and theoretical results on silicon Isolated Double Quantum Dots (IDQDs) with nearby Single Electron Transistors (SETs) for charge state sensing fabricated through trench isolation of SOI . The IDQD can be described as an artificial molecule and is therefore capable of exhibiting quantum states suitable for QIP . This silicon system has been chosen as a structure to carry out quantum operations and quantum information processing due to various advantageous characteristics: Low decoherence is expected due to low phonon coupling, the isolation of the active qubit device layer from an electron bath and the lack of direct electrical connection to leads. The IDQD architecture is also easily scalable to many qubit devices as surface gates are not required to define the structure, as such the optimised architecture can easily be developed in the silicon processing industry. Both charge and spin qubit operation can be realised in the IDQD , currently charge qubit operation is being pursued with the SET for readout. While the charge qubit is currently being pursued, spin qubit operation can also be implementedin the IDQD .

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