Development of a lateral pn junction

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• Mr. Shak Fernandes, Cavendish Laboratory, University of Cambridge
• Wednesday 21 November 2018, 14:00-15:00
• Ryle Seminar Room (930), Cavendish Laboratory, Department of Physics.

If you have a question about this talk, please contact Dr Kaveh Delfanazari.

Lateral pn junctions have a coplanar geometry making them ideally suited for integration with other lateral devices, such as single electron pumps. Primarily, they allow the direct injection of electrons and holes into the junction of a device. Several fabrication methods have been developed over the past years, such as those by molecular beam epitaxy (MBE) growth on a patterned GaAs substrate where the Si dopant is employed to simultaneously form a two-dimensional electron gas (2DEG) and two-dimensional hole gas (2DHG) [1]. Other methods include, partial etching of a GaAs/AlGaAs heterostructure to define the 2DEG and 2DHG regions [2], integrated MBE growth with focused ion beam (FIB) [3] and use of completely undoped GaAs/AlGaAs quantum well structured p-i-n junctions using conventional lithographic processes and gate biases to form 2DEG and 2DHG regions [4]. This project aims to integrate a lateral pn junction with a single electron pump to create a novel quantum light source. A critical stage in the formation of a single photon source (SPS) is the demonstration of electron transport across a lateral pn junction resulting in luminescence. Ideal SPSs have to generate indistinguishable photons, on demand, one after the other when periodically triggered [5]. Therefore, a correlation must exist between the emission of a single photon and a single electron. Single electron transport is achieved using an electron pump which consists of two gate electrodes placed across a narrow shallow-etched channel on a GaAs/AlGaAs HEMT . This talk will discuss the current development progress of a lateral pn junction fabricated on a modulation doped GaAs/AlGaAs quantum well structured wafer. [1] J. R. Gell, et al., Appl. Phys. Lett. 89 (2006) 243505. [2] B. Kaestner, et al., Jpn. J. Appl. Phys. 41 (2002) 2513. [3] T. Hosey, et al., Appl. Phys. Lett. 85 (2004) 491. [4] V. T. Dai, et al., Jpn. J. Appl. Phys. 2013, 52, 014001. [5] P. Senell

This talk is part of the Semiconductor Physics Group Seminars series.

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