University of Cambridge > > Semiconductor Physics Group Seminars > Performance optimization of 2.0-2.6 mm metamorphic InGaAs photodetectors

Performance optimization of 2.0-2.6 mm metamorphic InGaAs photodetectors

Add to your list(s) Download to your calendar using vCal

If you have a question about this talk, please contact Dr Joanna Waldie.

The so-called wavelength-extended In(x)Ga(1-x)As photodetector and arrays with x>0.53 are attracting particular interests as they show important applications in spatial remote sensing, etc. The ln(0.53)Ga(0.47)As photodetectors grown lattice-matched to InP are commercially mature with cutoff wavelength at 1.7 μm. By now, large efforts have been devoted to improve the performance of wavelength-extended InGaAs photodetectors due to the lack of lattice-matched substrates. I will talk about the research background and the status in our laboratory. Also, our latest efforts in improving the device performance of the In(0.83)Ga(0.17)As photodetectors will be discussed. This includes the optimization of metamorphic buffers and electron barriers in the photodetector structures.

This talk is part of the Semiconductor Physics Group Seminars series.

Tell a friend about this talk:

This talk is included in these lists:

Note that ex-directory lists are not shown.


© 2006-2024, University of Cambridge. Contact Us | Help and Documentation | Privacy and Publicity