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Nonlinear and Quantum Technologies in Silicon Nitride Photonic Integrated Circuits

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Abstract Silicon nitride has become a widely used material for photonic integrated circuits (PICs), due to its broad optical transparency window, moderately high refractive index, widely accessible growth mechanism in silicon foundries, and ability to support low propagation losses. In this talk, I will discuss our labs efforts to realize different physical resources of relevance to quantum science in this PIC platform. In the first part of my talk, I will focus on classical light sources we are developing for use in optical atomic clocks and quantum sensors. These microresonator optical parametric oscillators [1], [2] and octave-spanning microresonator frequency combs [3] leverage the broadband, bulk nonlinearity of the silicon nitride material itself. I will then review how, with suitable modifications, similar underlying nonlinear resonator technology can also be used for generating [4] and frequency converting quantum states of light [5]. In the final part of my talk, I will discuss how heterogeneous integration of the silicon nitride PICs with other materials, such as III -V epitaxial quantum dots [6] and alkali atomic vapors [7], can offer new resources such as on-demand single-photon generation and strong resonant nonlinearity to the silicon nitride platform.

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