Using scanning probes to fabricate and characterise nanoscale donor devices in silicon

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• Neil Curson, Centre for the Advanced Characterisation of Materials, University College London
• Thursday 28 February 2019, 16:00-17:00
• Mott Seminar Room, Cavendish Laboratory.

If you have a question about this talk, please contact Stephen Walley.

Atomic and nano-scale structures consisting of dopants buried in silicon can be used to make novel quantum devices. The process of fabricating buried donor structures using scanning tunnelling microscope-based lithography, combined with precursor gas adsorption and molecular beam epitaxy will be described. In addition, the electrical and optical characterisation of such structures using other techniques will be discussed, in particular revealing new physics about the interaction of the orbital dopant states with their local environment.

This talk is part of the Physics and Chemistry of Solids Group series.

This talk is included in these lists:

• All Cavendish Laboratory Seminars
• All Talks (aka the CURE list)
• Centre for Health Leadership and Enterprise
• Featured lists
• ME Seminar
• Mott Seminar Room, Cavendish Laboratory
• Neurons, Fake News, DNA and your iPhone: The Mathematics of Information
• Physics and Chemistry of Solids Group
• School of Physical Sciences
• Thin Film Magnetic Talks

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