University of Cambridge > Talks.cam > Surfaces, Microstructure and Fracture Group > Using scanning probes to fabricate and characterise nanoscale donor devices in silicon

Using scanning probes to fabricate and characterise nanoscale donor devices in silicon

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Atomic and nano-scale structures consisting of dopants buried in silicon can be used to make novel quantum devices. The process of fabricating buried donor structures using scanning tunnelling microscope-based lithography, combined with precursor gas adsorption and molecular beam epitaxy will be described. In addition, the electrical and optical characterisation of such structures using other techniques will be discussed, in particular revealing new physics about the interaction of the orbital dopant states with their local environment.

This talk is part of the Surfaces, Microstructure and Fracture Group series.

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