Performance optimization of 2.0-2.6 mm metamorphic InGaAs photodetectors

Add to your list(s) Download to your calendar using vCal

• Xingyou Chen, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences
• Monday 21 May 2018, 14:15-15:15
• Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory.

If you have a question about this talk, please contact Dr Joanna Waldie.

The so-called wavelength-extended In(x)Ga(1-x)As photodetector and arrays with x>0.53 are attracting particular interests as they show important applications in spatial remote sensing, etc. The ln(0.53)Ga(0.47)As photodetectors grown lattice-matched to InP are commercially mature with cutoff wavelength at 1.7 μm. By now, large efforts have been devoted to improve the performance of wavelength-extended InGaAs photodetectors due to the lack of lattice-matched substrates. I will talk about the research background and the status in our laboratory. Also, our latest efforts in improving the device performance of the In(0.83)Ga(0.17)As photodetectors will be discussed. This includes the optimization of metamorphic buffers and electron barriers in the photodetector structures.

This talk is part of the Semiconductor Physics Group Seminars series.

This talk is included in these lists:

• All Cavendish Laboratory Seminars
• All Talks (aka the CURE list)
• Centre for Health Leadership and Enterprise
• Featured lists
• ME Seminar
• Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory
• Neurons, Fake News, DNA and your iPhone: The Mathematics of Information
• School of Physical Sciences
• Semiconductor Physics Group Seminars
• Thin Film Magnetic Talks

Note that ex-directory lists are not shown.