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Molecular adsorption and strained graphene on boron nitride

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We have used high resolution ambient AFM to investigate the properties of graphene grown on hBN flakes on sapphire using molecular beam epitaxy (MBE) and find that giant moiré patterns form indicating that the graphene is highly strained. We also observe highly facetted cracks in the graphene leading to local regions of strain relief and highly anisotropic distortion of the graphene. It is also possible to use the AFM to generate cracks in the graphene which propagate over long distances. MBE has also been used to grow hBN on graphite which shows excellent electrical properties and the prospects for the growth of heterostructures formed from strain-engineered graphene and hBN are discussed.

This talk is part of the Surfaces, Microstructure and Fracture Group series.

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