Low bias gate tunable THz plasmonics signatures in CVD graphene of varying grain size (SP Workshop)

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• Mr Varun Kamboj, University of Cambridge, Semiconductor Physics Group
• Wednesday 02 March 2016, 14:15-15:15
• Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory.

If you have a question about this talk, please contact Teri Bartlett.

We report the characterization of centimetre sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ~65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.

This talk is part of the Semiconductor Physics Group Seminars series.

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