University of Cambridge > Talks.cam > Semiconductor Physics Group Seminars > Low bias gate tunable THz plasmonics signatures in CVD graphene of varying grain size (SP Workshop)

Low bias gate tunable THz plasmonics signatures in CVD graphene of varying grain size (SP Workshop)

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We report the characterization of centimetre sized graphene field-effect transistors with ionic gating which enables active frequency and amplitude modulation of terahertz (THz) radiation. Chemical vapour deposited graphene with different grain sizes were studied using THz time-domain spectroscopy. We demonstrate that the plasmonic resonances intrinsic to graphene can be tuned over a wide range of THz frequencies by engineering the grain size of the graphene. Further frequency tuning of the resonance, up to ~65 GHz, is achieved by electrostatic doping via ionic gating. These results present the first demonstration of tuning the intrinsic plasmonic resonances in graphene.

This talk is part of the Semiconductor Physics Group Seminars series.

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