Research on InP-based SWIR optoelectronic materials and devices

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• Dr Yi Gu, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science
• Wednesday 10 February 2016, 14:15-15:15
• Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory.

If you have a question about this talk, please contact Teri Bartlett.

Dr. Yi Gu will give an overview of the recent work on InP-based optoelectronic materials and devices carried out at the Shanghai Institute of Microsystem and Information Technology (SIMIT), part of the Chinese Academy of Sciences. This work includes InGaAs detectors, InGaAs(P) Avalanche Photodiodes (APDs), InP-based type-I Quantum Well (QW) lasers for emission at wavelengths beyond 2 µm and also bismuth-related materials and devices.

Dr. Gu earned his Ph. D. from SIMIT in 2009 and is currently an Associate Professor at the same institution. His research interests are the Molecular Beam Epitaxy (MBE) and the demonstration of III -V optoelectronic materials and devices. He has published more than 80 papers on peer-reviewed journals and four book chapters and has been visiting the University of Sheffield since September 2015, working on APD characterization and Bismide growth.

This talk is part of the Semiconductor Physics Group Seminars series.

This talk is included in these lists:

• All Cavendish Laboratory Seminars
• All Talks (aka the CURE list)
• Centre for Health Leadership and Enterprise
• Featured lists
• ME Seminar
• Mott Seminar Room (Mott Building Room 531), Cavendish Laboratory
• Neurons, Fake News, DNA and your iPhone: The Mathematics of Information
• School of Physical Sciences
• Semiconductor Physics Group Seminars
• Thin Film Magnetic Talks

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