University of Cambridge > Talks.cam > Semiconductor Physics Group Seminars > Probing the coupling between holes and nuclear spins in GaAs using a Landau level diode

Probing the coupling between holes and nuclear spins in GaAs using a Landau level diode

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Studying the coupling between spins of charge carriers and nuclear spins is a rapidly expanding field due to possible application for quantum information processing. Although there have been some electrical studies of the hyperfine coupling for holes in GaAs, most studies probed holes optically in self-assembled quantum dots.

Previously we compared electron-nuclear and hole-nuclear spin coupling through the breakdown of the quantum Hall effect in a narrow one-dimensional constriction. However, this method relies on detecting a small change in the sample resistance (

This talk is part of the Semiconductor Physics Group Seminars series.

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