Unified Description of Charge-Carrier Mobilities in Disordered Semiconducting Polymers

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• Dr Peter Bobbert, Eindhoven University of Technology
• Tuesday 22 November 2005, 14:15-15:15
• IRC Superconductivity Seminar Room, Cavendish Laboratory, Department of Physics.

If you have a question about this talk, please contact Chris McNeill.

Traditionally, much attention has been given to the dependence of the charge-carrier mobility in disordered semiconducting polymers on the electric field. However, it has recently become clear that the dependence of the mobility on the charge-carrier density cannot be neglected, not even in polymer light-emitting diodes, where this density is very low. From a numerical study of hopping transport on lattices with a Gaussian on-site energy disorder we have come to a unified description of the dependence of the mobility on density, electric field, and temperature. With this description, experimental current-voltage characteristics of hole-only devices with PPV derivatives as semiconductor can be fitted excellently. We come to the conclusion that the traditionally supposed electric field dependence of the mobility is actually, for a large part, a density dependence. Only at high voltages and low temperatures the dependence on electric field becomes important and this dependence can also be excellently modeled with our description.

This talk is part of the Optoelectronics Group series.

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