University of Cambridge > Talks.cam > Semiconductor Physics Group Seminars > Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Add to your list(s) Download to your calendar using vCal

If you have a question about this talk, please contact Dr Joanna Waldie.

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photothermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

This talk is part of the Semiconductor Physics Group Seminars series.

Tell a friend about this talk:

This talk is included in these lists:

Note that ex-directory lists are not shown.

 

© 2006-2018 Talks.cam, University of Cambridge. Contact Us | Help and Documentation | Privacy and Publicity