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University of Cambridge > Talks.cam > ME Seminar > 300GHz CMOS: From high-frequency measurement and device modelling to circuit design
300GHz CMOS: From high-frequency measurement and device modelling to circuit designAdd to your list(s) Download to your calendar using vCal
If you have a question about this talk, please contact F.S.F. Brossard. This talk will give an overview of the development of millimetre-wave/THz CMOS circuits at Hiroshima University which recently culminated in the demonstration of 28Gb/s wireless digital data transmission at 300GHz. Circuit design at above 100GHz is challenging for one thing because device models used for circuit simulation are not as predictive as at lower microwave frequencies, and for another because the MOS transistor is not the most high-performance device for high-frequency applications. The topics to be covered include millimetre-wave measurement, device modelling, and the design of a 300GHz CMOS transmitter that operates above the transistor fmax (unity-power-gain frequency). This talk is part of the ME Seminar series. This talk is included in these lists:Note that ex-directory lists are not shown. |
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