University of Cambridge > > Electron Microscopy Group Seminars > Strain Tensor Mapping using Electron Backscatter Diffraction

Strain Tensor Mapping using Electron Backscatter Diffraction

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If you have a question about this talk, please contact Dr Jonathan Barnard.

In this presentation we will briefly review earlier attempts to study local elastic and plastic strains distributions using EBSD before moving on to discuss recent cross-correlation based analysis of EBSD patterns. Cross-correlation methods can be used to determine small shifts in features within an EBSD pattern compared to a reference pattern. Pattern shift measurements at many regions of the patterns can be used to establish a best fit strain and rotation tensor. Shift measurements at ±0.05 pixels allow the elements of the strain tensor (and small misorientations) to be measured to ±10-4 (and ±0.006° for rotations). This is a significant improvement in the angular resolution compared to the conventional linear Hough (or Radon) transform based EBSD analysis. The new cross-correlation based analysis has been applied to several varied materials science problems. Results from functional (SiGe/Si mesa and GaN layers) and structural materials (crack tips, and nanoindentations) will be used to illustrate the use of the method in studying both elastic and plastic deformation.

This talk is part of the Electron Microscopy Group Seminars series.

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