Induced stress due to focused ion beam milling and minimum feature sizes

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• Dr Richard Langford, Dept of Physics, University of Cambridge
• Tuesday 24 November 2009, 15:00-16:00
• T001 [Tower Seminar Room], Materials Science and Metallurgy, Department of.

If you have a question about this talk, please contact Dr Jonathan Barnard.

Focused ion beam (FIB) systems are routinely used to prepared samples for physical and chemical analysis and micro and nanomachining. Unfortunately, FIB imaging and sputtering may create stress within a material which can adversely affect a devices performance or a machined structure. The first part of the talk discusses measurements to determine the magnitude of the induced stress in silicon as a function of dose. The second part of the talk discusses focused ion beam micro and nanofabrication methods to produce sub 5 nm structures and the factors that dictate the minimum feature sizes.

This talk is part of the Electron Microscopy Group Seminars series.

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