![]() |
COOKIES: By using this website you agree that we can place Google Analytics Cookies on your device for performance monitoring. | ![]() |
University of Cambridge > Talks.cam > Lennard-Jones Centre > Modelling excitons in 2D semiconductors: from charged defects to moiré materials
Modelling excitons in 2D semiconductors: from charged defects to moiré materialsAdd to your list(s) Download to your calendar using vCal
If you have a question about this talk, please contact Kang Wang. Excitons play a key role for the optical properties of 2D semiconductors, but it can be difficult to understand the results of experimental measurements. To address this challenge, theoretical calculations of excitonic properties provide useful insights. However, performing such calculations for systems containing defects or moiré patterns can be computationally challenging. In my talk I will present results for optical properties of charged defects in 2D semiconductors and also for twisted bilayers of 2D semiconductors obtained from an efficient implementation of the Bethe-Salpeter equation based on accurate tight-binding models. This talk is part of the Lennard-Jones Centre series. This talk is included in these lists:
Note that ex-directory lists are not shown. |
Other listsDepartment of Materials Science & Metallurgy Goldsmiths' Seminars All Biological Anthropology Seminars and Events World History Workshop Reading GroupOther talksScore-based calibration testing for multivariate forecast distributions Title TBC Bayesian anomaly detection for Cosmology - 21cm, Supernovae, and beyond Correlations of the Möbius function Title TBC Afternoon Tea |