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Modelling excitons in 2D semiconductors: from charged defects to moiré materials

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Excitons play a key role for the optical properties of 2D semiconductors, but it can be difficult to understand the results of experimental measurements. To address this challenge, theoretical calculations of excitonic properties provide useful insights. However, performing such calculations for systems containing defects or moiré patterns can be computationally challenging. In my talk I will present results for optical properties of charged defects in 2D semiconductors and also for twisted bilayers of 2D semiconductors obtained from an efficient implementation of the Bethe-Salpeter equation based on accurate tight-binding models.

This talk is part of the Lennard-Jones Centre series.

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