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Hyperbonding in chalcogenides: origin of the electronic property contrast in phase-change memory materials

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  • UserStephen Elliott
  • ClockWednesday 19 May 2021, 11:30-12:30
  • HouseZoom.

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A new type of non-volatile (storage-class) electronic memory (Optane) has been developed by Intel, based on telluride materials. In this, binary information is stored as one of two metastable atomic-structural states of the memory material having differing electronic properties, rather than as trapped electronic charge. The glassy state is electrically resistive, whereas the crystalline state is electrically conductive. Voltage-pulse-induced reversible changes between these two phases are extremely rapid, ~ ns. However, the chemical-bonding nature of these two phases has been very controversial. In this talk, I will briefly describe the results of DFT -based simulations of these materials, and show how they support the notion of hyperbonding (3 centre-4 electron interactions) in these materials as an explanation for the property-contrast and ultra-rapid crystallization characteristics that they exhibit.

This talk is part of the Electronic Structure Discussion Group series.

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