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University of Cambridge > Talks.cam > Cavendish Quantum Information Seminar Series > Large dispersive interaction between a CMOS double quantum dot and microwave photons
Large dispersive interaction between a CMOS double quantum dot and microwave photonsAdd to your list(s) Download to your calendar using vCal
If you have a question about this talk, please contact . We report a large coupling rate, g/2π = 183 MHz, between the charge state of a double quantum dot in a CMOS split-gate silicon nanowire transistor and microwave photons in a lumped-element resonator, which is formed by wire-bonding to a superconducting inductor fabricated on a separate chip. We enhance the coupling by exploiting the large interdot lever arm of an asymmetric split-gate device, α =0.72, and by inductively coupling to the resonator to increase its impedance, Z = 560 Ω. In the dispersive regime, the large coupling strength at the DQD hybridisation point produces a frequency shift comparable to the resonator linewidth, the optimal setting for maximum state visibility. We exploit this regime to demonstrate rapid gate-based readout of the charge degree of freedom, with an SNR of 3.3 in 50 ns. In the resonant regime, the fast charge decoherence rate precludes reaching the strong coupling regime, but we show a clear route to spin-photon circuit quantum electrodynamics using hybrid CMOS systems. References 1) https://arxiv.org/abs/2004.00334 Zoom Link Please click the link below to join the webinar: https://us02web.zoom.us/j/86846521451?pwd=M0VUSE5wTEJwSndCbEx0VUtqNHpuZz09 Passcode: 226745 This talk is part of the Cavendish Quantum Information Seminar Series series. This talk is included in these lists:Note that ex-directory lists are not shown. |
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