Spin gating electrical currents- Dr. Chiara Ciccareli, ME Group

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• Dr. Chiara Ciccareli, ME Group
• Thursday 13 December 2012, 14:30-16:00
• Mott Seminar Room, Cavendish Laboratory.

If you have a question about this talk, please contact Kimberly Cole.

In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. Here, we demonstrate the spin-gating effect for an aluminium single electron transistor (SET) gated by GaMnAs. The conductance variation of the SET provides a direct probe of the magnetisation dependent change in the chemical potential of the magnetic gate with μeV resolution. In performing magnetic field sweeps in fixed directions we also observe the non-linearity of the chemical potential in GaMnAs. The control of a transistor conductance by the gate magnetisation demonstrates a new approach for constructing spin transistors: instead of spin-transport controlled by ordinary gates we spin-gate ordinary charge transport.

This talk is part of the Thin Film Magnetic Talks series.

This talk is included in these lists:

• Mott Seminar Room, Cavendish Laboratory
• Thin Film Magnetic Talks

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