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SUMMARY:Electrical and Optical Properties of Hole Spin Storage Devices Bas
 ed on InGaAs Self-assembled Quantum Dots  - Wladislaw Michailow\, Walter S
 chottky Institute and University of Cambridge
DTSTART:20171120T141500Z
DTEND:20171120T151500Z
UID:TALK95827@talks.cam.ac.uk
CONTACT:Dr Joanna Waldie
DESCRIPTION:For quantum information processing\, physical implementations 
 of qubits are needed that exhibit long coherence times but can be manipula
 ted quickly. Promising candidates for qubits are spins of valence band hol
 es confined to self-assembled quantum dots.\n\nWe studied an n-i semicondu
 ctor heterostructure with InGaAs self-assembled quantum dots and an AlGaAs
  blocking barrier as a hole storage device. Macroscopic large-area photocu
 rrent and photoluminescence measurements are used to probe the bandstructu
 re and potential distribution in the heterostructure\, which are in good a
 greement with current-Poisson simulations. A fast and scalable technique i
 s used to locate the quantum dots and determine their emission wavelengths
 . Measurements on single quantum dots demonstrate deterministic charging w
 ith holes. Electron and hole tunneling rates are measured and well describ
 ed by one-dimensional Wentzel-Kramers-Brillouin calculations. The effect o
 f the AlGaAs barrier on the hole tunneling rate is pointed out.
LOCATION:Mott Seminar Room (Mott Building Room 531)\, Cavendish Laboratory
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