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CATEGORIES:Mott Colloquium
SUMMARY:Nano-Ferroelectric Materials and Devices - Profess
 or James Scott\, Earth Sciences\, Cambridge
DTSTART;TZID=Europe/London:20051102T161500
DTEND;TZID=Europe/London:20051102T173000
UID:TALK4476AThttp://talks.cam.ac.uk
URL:http://talks.cam.ac.uk/talk/index/4476
DESCRIPTION:A summary is presented of recent developments in f
 erroelectric nanotubes\, nanowires and nanodots\, 
 their electrical characterization and related theo
 ries of their structures\, including the possibili
 ty of toroidal ordering.  Also summarized is recen
 t work on ultra-thin single crystals (<70 nm) and 
 a status report on ceramic thin films\, particular
 ly in [3D] configurations for DRAM (dynamic random
  access memories) trenched capacitors. In the past
  four years in several countries\, including Russi
 a\, Germany\, the UK\, and the USA\, ferroelectric
  nano-structures have been produced and characteri
 zed.  At present a variety of techniques are emplo
 yed for their deposition or construction\, includi
 ng sol-gel\, CVD\, and FIB (focused ion beam).  A 
 popular technique involves the use of porous sacri
 ficial substrates of either silicon or alumina.  W
 ith this method one can obtain nanotubes and nanow
 ires from ca. 20 nm diameter to approximately 4 mi
 crons.   A high degree of registration is obtainab
 le with porous Si\, less so with Al2O3.  Meso-poro
 us GaAs and GaN are also available.  In the presen
 t talk I would like to show some examples of such 
 ferroelectric nano-technology\, together with a su
 mmary of the relevant theories and models\, and su
 ggestions for prototype devices.
LOCATION:Pippard Lecture Theatre\, Cavendish Laboratory\, D
 epartment of Physics
CONTACT:Duncan Simpson
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