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CATEGORIES:Lennard-Jones Centre
SUMMARY:Towards the Next Generation of Spintronics: Transp
 ort in Van der Waals Antiferromagnets - Lishu Zhan
 g\, Peter Grünberg Institut (PGI-1) and Institute 
 for Advanced Simulation (IAS-1)\, Forschungszentru
 m Jülich\, Germany
DTSTART;TZID=Europe/London:20240513T140000
DTEND;TZID=Europe/London:20240513T143000
UID:TALK216556AThttp://talks.cam.ac.uk
URL:http://talks.cam.ac.uk/talk/index/216556
DESCRIPTION:Antiferromagnetic spintronics is an emerging field
  that capitalizes on the unique properties of anti
 ferromagnetic materials for spin-based information
  processing and storage\, presenting several advan
 tages over their ferromagnetic counterparts. These
  include faster spin dynamics\, reduced susceptibi
 lity to external magnetic fields\, and the absence
  of stray fields that interfere with adjacent devi
 ces.\n\nIn this talk\, I will unveil our theoretic
 al investigations on the development of antiferrom
 agnetic devices\, merging distinct yet interconnec
 ted explorations. Our journey commences with the c
 oncept of van der Waals (vdW) field-free spin-orbi
 tal torque (SOT) antiferromagnetic memory. Here\, 
 we utilize a vdW bilayer LaBr2\, an antiferromagne
 t with perpendicular magnetic anisotropy\, coupled
  with a monolayer Td phase WTe2\, a Weyl semimetal
  with broken inversion symmetry.[1] This combinati
 on heralds devices with a strikingly low critical 
 current density of approximately 10 MA/cm2 and swi
 ft field-free magnetization switching in 250 ps\, 
 contributing to superior write performance with mi
 nimal energy consumption. Moreover\, the device bo
 asts a significantly low read error rate\, highlig
 hted by a high tunnel magnetoresistance (TMR) rati
 o of up to 4250%.\n\nI then transition to discussi
 ng current-driven magnetoresistance in vdW spin-fi
 lter antiferromagnetic tunnel junctions using MnBi
 2Te4. Our insights indicate that the current-volta
 ge (I-V) characteristics and\, consequently\, the 
 TMR can be effectively manipulated by adjusting th
 e device length and bias voltage. This control is 
 further enhanced by incorporating a boron nitride 
 layer\, which selectively suppresses specific spin
  channels based on the magnetic configurations\, l
 eading to a TMR boost with values soaring up to 36
 90%.\n\nConcurrently\, we delve into the enhanceme
 nt of orbital transport in altermagnetic (spin-spl
 itting band) RuO2. Through these concerted theoret
 ical efforts\, we are paving the way for the next 
 generation of high-efficiency\, high-performance a
 ntiferromagnetic spintronic devices.\n\nReferences
 :\n\n[1] Zhang\, Lishu\, et al. "Van der Waals Spi
 n-Orbit Torque Antiferromagnetic Memory." arXiv:23
 10.02805\n\n[2] Zhang\, Lishu\, et al. "Current-dr
 iven magnetic resistance in van der Waals spin-fil
 ter antiferromagnetic tunnel junctions with MnBi2T
 e4" Physical Review Applied 20 (4)\, 044056
LOCATION:Zoom link: https://zoom.us/j/92447982065?pwd=RkhaY
 kM5VTZPZ3pYSHptUXlRSkppQT09
CONTACT:Dr Sun-Woo Kim
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