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CATEGORIES:Semiconductor Physics
SUMMARY: Architectures for ion quantum technology - Dr. Wi
 nfried K. Hensinger\, Ion Quantum Technology Group
 \,Department of Physics and Astronomy\, University
  of Sussex\, United Kingdom
DTSTART;TZID=Europe/London:20061009T141500
DTEND;TZID=Europe/London:20061009T151500
UID:TALK5494AThttp://talks.cam.ac.uk
URL:http://talks.cam.ac.uk/talk/index/5494
DESCRIPTION:Quantum theory can have powerful applications due 
 to the possibility of\nimplementing new quantum te
 chnologies such as the quantum computer. While\nsu
 ch a device could have very important commercial a
 nd national security\napplications due to the exis
 tence of quantum factoring algorithms\, its\nexist
 ence could revolutionize modern day science by all
 owing true quantum\nsimulations of systems that ma
 y be modelled classically only insufficiently\ndue
  to an in-principle limitation of current computer
  technology. Recent\ndevelopments in ion trapping 
 technology show that it should be possible to\nimp
 lement quantum technology with trapped ions. Trapp
 ed ion quantum\ntechnology has already been succes
 sfully applied in experiments with a token\nnumber
  of quantum bits\, for example to realize quantum 
 algorithms such as\nsearch\, the generation of par
 ticular entangled states of up to 8 ions\,\ntelepo
 rtation\, ion-photon entanglement\, error correcti
 on and others. In\norder to build useful devices\,
  the next step must include the systematic\ndevelo
 pment of suitable architectures for large scale io
 n quantum technology\napplications.\n\nIn this tal
 k I will discuss pathways how such architectures m
 ay be realized\nand recent progress that has been 
 made\, particularly focusing on recent\nexperiment
 s at the University of Michigan. The scalable fabr
 ication of ion\ntrap arrays involves advanced nano
 fabrication techniques including\nphotolithography
 . A first step has been made with the successful\n
 implementation of an integrated ion chip etched in
  a multi-layer\nGallium-Arsenide substrate. Shuttl
 ing ions in multidimensional structures\nwill like
 ly form an important tool for the interchange of q
 uantum\ninformation. Recently we demonstrated full
  two-dimensional control including\nthe controlled
  .three-point-turn. of two ions in a .T-junction. 
 array. I\nwill show a perspective of the work that
  still needs to be carried out in\norder to produc
 e practical devices and highlight the importance o
 f the\ncondensed matter . atomic physics interface
 . I will also discuss a recent\nmeasurement of the
  scaling of motional heating from the quantum grou
 nd state\nin an ion trap with moveable electrodes\
 , the demonstration of significant\nsuppression of
  anomalous patch potential heating\, and the demon
 stration of\nan ion trap with 23 microns ion-elect
 rode spacing.\n\nFinally\, I will mention a propos
 al to explore the quantum nature of\nnanomechanica
 l devices using single trapped ions as a transduce
 r. While an\nion may be used to cool the cantileve
 r down to its lowest motional quantum\nstate via s
 ympathetic cooling\, one could also envision coupl
 ing both systems\nin the quantum domain. The quant
 um state of the ion may be transferred onto\nthe c
 antilever and cantilever and ion could be entangle
 d.\n
LOCATION:Mott Seminar Room\, Cavendish Laboratory\, Departm
 ent of Physics
CONTACT:K DAS GUPTA
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